Design And Performance Analysis Of C₃N Nanoribbon Field Effect Tube

In recent decades,semiconductor chips are becoming more and more integrated,and the prospect of nanoscale electronic devices is more and more bright.The iterative updating of electronic information systems and technological innovation of semiconductor technology put forward higher requirements for the performance of electronic devices.As the size of transistors decrease,there are two challenges that we need to solve.First is the static control problem.The channel of transistors becomes shorter,and the corresponding gate regulation capability becomes weaker.Second,since the turn-on voltage of the conventional field effect transistor?MOSFET?more than 0.5V,the leakage current and the power consumption will be both increased while the transistors structure is thinned,and this can cause heat dissipation problem.Currently,in order to solve these two problems,there are two effective methods:one is to seek a new type of two-dimensional semiconductor material with superior performance;another one is to find a way to reduce the operating voltage and leakage current of the device by improving the device structure.This paper will carry out the modeling and simulation of double-gate field effect transistor?DG-MOSFET?and double-gate tunneling field effect transistor?DG-TFET?based on the new two-dimensional semiconductor material C₃N nanoribbon from the following two perspectives.Simulation results show that MOSFETs and TFETs based on C₃N nanoribbon can reduce device static power while improving device performance.First,to learn about the physical electronic properties of the C₃N nanoribbon,we have applied a multi-scale simulation method.Firstly,the energy band structures of armchair C₃N nanoribbon with four different widths and one kind of zigzag C₃N nanoribbon were studied with first-principles.Other physical properties such as effective mass,mobility,and electron transport have been researched similarly to learn about how chirality and width influences the electrical conductivity of the C₃N nanoribbon.Secondly,the armchair C₃N nanoribbon with different widths are modeled as MOSFETs,then using the multi-scale modeling and simulation methods of nanoscale devices to study the effects of channel width,channel length,source,drain doping concentration and gate length on device performance of C₃N nanoribbon MOSFETs.Finally,the device performance of the C₃N nanoribbon MOSFET is analyzed from the perspectives of static power consumption,switching performance and current drive capability.Secondly,in order to reduce the static power consumption and improve the switching performance of the C₃N nanoribbon MOSFET,we designed the C₃N nonaribbon PIN-TFET and PNIP-TFET with the working principle and design method of the TFET.The multiscale modeling simulation method of nanoscale devices was also used to study the device performance of C₃N nanoribbon TFETs.The results showed that the C₃N nanoribbon-based PIN-TFET and the PNIP-TFET structure can effectively reduce the static power consumption and improve switching performance of the device compared to the C₃N nanoribbon MOSFET.