High-speed InGaAs Detector Material Epitaxy And Device Development

In recent years,optical communication industry is striding forward to the direction of high speed and large capacity,proposed a new generation of information infrastructure projects in nineteen large and medium-sized,one of the three large scale networking project 5G is its key support of the our country to a global leader in 5G communication.The core components of the production process relative to foreign countries there are still some gaps.This thesis starts with the fabrication of the detector,and the main work is as follows:1.We investigate the optical communication market,predict the development prospect and the necessity of development of the detector,and analyze and summarize the development status of the optical receiver at the same time.We choose the InGaAs PIN detector as the research and development direction.2.According to the working principle of InGaAs detector,the characterization parameters of detector responsivity,dark current,internal quantum efficiency,response time and absorption coefficient is studied,then the epitaxial structure in each layer are designed,including selection of epitaxial substrate,a buffer layer thickness design,thickness design and P type layer selection,focuses on the quantum efficiency of the detector,response time and detection rate of theoretical calculation of high response and high efficiency of the intrinsic layer thickness of 0.8?m,In practical applications,the effect of quantum efficiency should be considered,so we select 2?m as absorption layer.The final selection of the P type layer analysis has been made on the table,it is also proposed that the use of the desktop PIN structure to make the high responsiveness InP based infrared detector has obvious response speed advantage.3.MOCVD used for epitaxial growth for epitaxial growth is introduced.The temperature system and thickness monitoring system of MOCVD are corrected,and the correction method is given.The principle of PL,ECV and XRD is also studied.4.Through the use of 2800G4 5*8" MOCVD,based on adjusting the growth temperature and 53 ratio,we got the InGaAs monolayer which has a smooth surface,and design a simple structure,Through the characterization of this simple structure,the dark current is optimized to reach the InGaAs monolayer at the 1nA level.Through repeated experiment five group element partial pressure ratio summed up the As P gas phase pressure and partial pressure of solid growth,we got a fixed wavelength InGaAsP single layer,we also research the hight doping InP and InGaAs.It was found that the highest doping concentration of Zn in InP and InGaAs is affected by temperature,and the doping of Zn will lead to serious lattice distortion of InGaAs.It is necessary to modify the gas of In and Ga to match the lattice.5.The epitaxial piece is made into a detector,and the first sample is produced but the dark current is too large.Discovered by SIMS Zn has a serious diffusion to InGaAs,that affect the crystal quality of the absorption region.And through graded doping and decreasing temperature and diffusion time were again making.Final we got a chip witch have a good performance witch dark current is less than 5nA and 3DB bandwidth reaches 10G.The work we did provides the basis and support for the production of higher-speed detectors and detector arrays.