| Because of the special structure and process of MSM device, the MSMdevice has some advantages, such as, low dark current, low capacitance, highbandwidth sensitivity, high speed and so on. And the MSM manufacturingprocess is fully compatible with the MOSFET technology. Thus, the MSMdevice is conducive to production of optoelectronic integrated(OEIC) devicesand large-scale infrared focal plane array(IR-FPA) devices. Based on thediffident composition of InAs and GaAs, The effective operatingwavelength of InGaAs infrared detector range can cover from0.5to2.5m.Compared with HgCdTe detector, the R0A of InGaAs detector is1to2ordershigher than HgCdTe, the SNR can be increased by3to10times and has ahigh quantum efficiency and sensitivity.This paper begins with the photoelectric characteristics of MSMphotodiodes, base on the thermionic emission theory. Then discuss thestructural characteristics of this device and optical and electrical properties.Based on this theoretical analysis and the existing experimental conditions ofXi’an Institute of Optics and Precision Mechanics, Chinese Academy ofSciences, we explore the following works:1On the base of the thermionic emission model of MSM photodetectors,we explain the basic operating mode of InGaAs-MSM photodetectors.2The InGaAs-MSM epitaxial layer structure of semiconductor infrareddetectors is designed.3The interdigital electrode size of a single point and focal planearray(FPA) are designed.4The plane array detector is taped and packaged.5The responsiveness, I-V characteristics and impulse response of thedevice are tested. 6The experimental platform to simulate optical radar and object thedistance information to draw the three-dimensional map of the target isbuilded. |
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