The Research And Fabrication Of The Si And InP/InGaAs MSM Photoelectric Detector

Metal-Semiconductor-Metal photodetectors have promising applications of optoelectronics integrated circuits. This structure results in two important features. First, simplicity in processing and fabrication; Second, processing compatibility with conventional FET-based electronics because of their planar structure. MSM-PD has the properties of high-speed, high-sensitivity, and it can be used as wide-bandwidth optoelectronic receivers, which include monolithically integrated with HEMT and FET amplifiers.After considering the photo and electrical propertity of MSM-PD in this article, we carried out some research on MSM PD as following.Firstly, design the mask plate of the optical lithography;Secondly, in order to get the 2-3iim finger spacing and widths, we use the lift-off method. After the fabrication of the Si-based MSM-PD, we do some research on the spectrum response, current-voltage characteristics, dark current and soon.We also get some parameters of the device after simulating and found that the theoretical value is in good agreement with the experimental one.Thirdly, focusing on the positive photoresist;Fourthly, we will further our study on the integration with HEMT to form monolithic receivers.