Research On Performance Of Flexible Resistive Memory Based On SiO_x

With the development of science and technology,portable electronic devices are becoming more and more popular,and people's requirements for memory are increasing day by day.The traditional memory can no longer meet people's needs.However,the resistance variable memory?RRAM?has been widely studied.It has the characteristics of low operating voltage,low power consumption,high writing speed,erasure resistance,non-destructive reading,long holding time,simple structure and so on.Moreover,it can be compatible with traditional CMOS technology.In our daily life,we need more and more embedded technologies that can interconnect,communicate and transmit information,which is the challenge faced by scientists,so we need to find better ways to make these items more"smart"and interconnected.Intelligent wearable products are gradually applied to people's daily life and production.However,each component in electronic integration technology can not adapt to the flexible environment,which directly affects whether intelligent wearable products can be widely used.Therefore,flexible electronic devices have attracted more and more attention.Flexible RRAM requires that the three-layer materials must maintain the structural integrity and performance stability under different stress states.As a solid electrolyte material,SiO₂ has a good resistance property,while SiO₂ can not be used as a flexible resistance layer material directly.At present,there is no specific detailed study on the mechanical properties of SiO₂.In this paper,the influence of SiO₂ size and temperature on its mechanical properties is discussed by using the method of molecular dynamics from the micro level.Then the mechanical properties of SiO_x are discussed.The research shows that the content of oxygen atoms can change the brittleness of SiO₂ and make it appear plastic.Then,the electrical properties of Ag/SiO_x/Pt model are studied by means of the first principle,so as to judge the feasibility of SiO_x as flexible RRAM.Firstly,the mechanical properties of SiO₂ were studied by LAMMPS software,and three potential functions?Buckingham,Tersoff and BKS?were compared in stress-strain curve and elastic constant.The results showed that the BKS potential function was closer to the experimental value.Then we need to determine the cut off in the BKS potential function,and finally choose the 11?cut off.Then the size of?-quartz is changed,and the influence of size on the mechanical properties of?-quartz is studied.The results show that the smaller the size of X or the larger the size of Y and Z,the better the toughness of the material.Then the mechanical properties of?-quartz at 100K⁷00K are simulated by computer,and the dependence of the mechanical properties of?-quartz on temperature is proved.The results show that when SiO_1.9134.9134 is used,it has better flexibility,and the content of oxygen atom can change the brittleness of SiO₂ to make it plastic.Secondly,through the Materials Studio based on the first principle software studies the electrical performance of the device,starts to describe the model and simulation calculation method of the?-quartz structure,and then the truncation energy in the calculation process is tested to ensure the accuracy of calculation.The purpose of the test is to improve the calculation speed as much as possible on the premise of meeting the accuracy of their own needs.Therefore,in this paper,we select the cutoff The energy is 500eV.It is found that the band gap width of?-quartz is much worse than that of the experimental value 9eV.The band gap is corrected by GGA+U method,and 8.994eV is close to the experimental value.Then I-V curves of the SET process of Ag/SiO₂/Pt model and Ag/SiO_x/Pt model are calculated.It is found that the more oxygen atoms are deleted from?-quartz,the set voltage gradually decreases.Finally,the phenomena are explained from the band gap width of SiO_x.As for the RRAM of based on SiO₂,the mechanical and electrical properties of tensile and SiO_x are studied in detail in this paper,which plays a theoretical guiding role in the experimental research related to the application of SiO_x in flexible RRAM.