Deep Ultraviolet Photochemical Fabrication Of TiO₂ And ZrO₂ Flexible Resistive Switching Devices And Its Properties

Resistive random access memory?RRAM?has drown much attention due to its simple structure,fast read-write speed,low power consumption,high integration,good compatibility with traditional semiconductor technology.With the rapid development of flexible electronic technology,the research of flexible RRAM has also caused the attention of the people.Most flexible substrates cannot endure high annealing temperatures,so the low temperature processing method will have an important application prospect in the fabrication of flexible devices.Around this problem,this study have been studied the low temperature preparation and the device performance of TiO₂ and ZrO₂ resistance switching thin films fabricated by deep ultraviolet irradiation technique.In this paper,we studied the current-voltage?I-V?curves,the conductive mechanism at highresistance and low-resistance states,retention characteristics and cycle characteristics of TiO₂ and ZrO₂ flexible RRAM by changing the process parameters,bending radius and bending times.In addition,we studied the microfabrication of TiO₂ and Zr O2 thin films and the electrical properties of the micro-pattern flexible RRAM.The following are conclusions:?1?The Pt/TiO₂/ITO device with bipolar resistive switching behavior was obtained through three-hour deep ultraviolet irradiation at 150 ?.The device showed excellent electrical properties including high on/off ratio?103?,good retention?104 seconds at room temperature?and cycle?600 cycles?characteristics.The conduction mechanism of the device was ohm conduction at low-resistance state,and was space charge limiting current?SCLC?effect at high-resistance state.?2?The Pt/TiO₂/ITO/PET device with bipolar resistive switching behavior was obtained by deep ultraviolet irradiation at 150 ? for 3 h.The on/off ratio of the device was 103.The retention characteristics and the cycle characteristics of the device were not declined with different bending radius and bending times.?3?The Pt/ZrO₂/ITO/PET device with bipolar resistive switching behavior was prepared by deep ultraviolet irradiation at 150 ? for 3 h.The on/off ratio of the device was 105.The cycle characteristics of device became worse when the bending radius of device was 12.55 mm.?4?With irradiation one-hour of 365 nm UV light,the micro-patterns of TiO₂ and Zr O2 gel films were obtained.Then integrated Pt/TiO₂/ITO/PET and Pt/ZrO₂/ITO/PET resistive switching devices were obtained by deep ultraviolet irradiation at 150 ? for 3h.