| The Gallium Nitride power device has fast switching speed and can work under high frequency conditions,it will gradually replace traditional power devices and be applied to bridge power systems.In bridge power systems,due to the parasitic inductance of GaN device causes grid voltage spike during current conversion,which leads to gate breakdown of GaN device,it is necessary to design high side overvoltage protection circuit in GaN driver ICs.High-voltage to low-voltage level shifter circuit is the core part of the overvoltage protection circuit.Its signal transmission delay,noise suppression will directly affect the reliability of overvoltage protection circuit.Therefore,it is of great significance to study the high voltage to low voltage level shifter circuit.The characteristics of the GaN power device and the design requirements of the high voltage to low voltag level shifter circuit of driver ICs are introduced in this thesis.The reliability and transmission delay characteristics of the traditional high voltage to low voltage level shifter circuit.are deeply analyzed,the circuit uses RC filter circuit to suppress power noise and increase transmission delay.On the basis of the above analysis,a low-delay high-reliability high voltage to low voltage level shifter circuit based on the GaN driver ICs is designed.The current mirror is used to level shift,which effectively reduces the transmission delay of the circuit.Adds noise detection circuit,use its output wide pulse signal to eliminate signal caused by power noise,avoid error signal output,and improves the circuit's suppression supply noise.The design of this thesis is based on the 0.5?m 100 V BCD process platform for simulation and verification.The simulation results show that,under the condition of 100 V working voltage and 1MHz signal transmission frequency,the transmission delay is 8.2ns,the noise suppression is 100V/ns,and the static current is 24.1?A,which meet the design requirements. |
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