Investigation Of Single Event Effect In Novel Tri-Indipendent-Gate FinFET And Circuits

Based on the demand of space exploration in aerospace field,integrated circuit for spacecraft is facing the challenge of working environment full of cosmic radiation.On the one hand,a variety of high-energy particles in the cosmic environment can cause circuit malfunction,thus deprive spacecraft of the ability to detect and transmit information.On the other hand,the highly integrated space circuit is the inevitable trend of development.However,as integration increases,integrated circuits become more sensitive to space radiation.Therefore,it is of great significance to study the radiation reliability of integrated circuits.Currently,the fin field effect transistor(Fin FET)has gradually replaced the planar metal-oxide-semiconductor field effect transistor(MOSFET)in integrated circuits in the deep submicron process generation.But the exploration of new devices to optimize circuit performance is still ongoing.A novel Fin FET device(TIG Fin FET)with three independent gate structures was proposed.The single event transient(SET)effect of the TIG Fin FET,and the single event effect(SEE)of the inverter and the 6T SRAM unit were investigated.The specific research contents and results were as follows:Firstly,a detailed device-level simulation of TIG Fin FET's SET by TCAD tools was studied.The 3D simulation results shown that the peak value of SET currents collected by N-type TIG Fin FET was 1.25 times higher than that of P-type TIG Fin FET under the same heavy ion incidence.When the incident paths pass through the channel and substrate of Ntype TIG Fin FET respectively,the ratio of SET current collected at the drain terminal was 0.96:0.21.And it was larger than the ratio of volume,which was 0.67:0.37.While,according to the results of heavy ion hitting from source terminal to drain terminal,the peak value of transient current collected at drain barrier ragion was 1.6 m A higher than that at source barrier ragion.The trend of transient current collected at the drain voltage was the similar to the barrier distribution trend.In addition,study of incident angle sensitivity found that the peak currents of transient pulses collected at different incident angles were positively correlated with the volumes of heavy ion incident path.Secondly,SEE simulations were carried out on the combined circuit,inverter,which were composed of TIG Fin FETs.And the radiation stabilities were evaluated by the effects of heavy ion radiation on the propagation delay.At first,various inverter circuits were built successfully basing on TIG Fin FET's various opening modes.Then,after the voltage transfer curve(VTC)of the inverters adjusted,the parameters of circuits were listed in table.Parameters included channel lengths and widths of devices,capacitances and resistances in the output.Then the SET simulations were carried out.The sensitivity of inverters were compared in order.And the inverter propagation delay caused by radiation in various modes were different.Afterwards,the simulations of TIG Fin FET,conventional Fin FET,and independent double-independent-gate(DIG)Fin FET inverters were finally compared.The results shown that some TIG Fin FET inverters had less propagation delay caused by radiation.Furthermore,the relative delays were significantly lower than Fin FET conventional inverter.Thirdly,the SEE simulations of novel SRAMs which designed by TIG Fin FETs were carried out through TCAD mix-mode simulation with parameters extraction method.The process of this TCAD simulation method was detailed described.The simulation results of SRAM-TIG1 reading operation shown that this simulation method could reduce the simulation time by at least four times while ensuring accuracy.Finally,the SEE performance of the two kinds of SRAM units was investigated by this method.The results shown that the better the conductivity of the access transistors,the stronger the antiirradiation ability,and SRAM-TIG2 with feedback design was more stable.This paper made a detailed study on the SEE reliability of TIG Fin FET and further explored the SEE of the inverter and SRAM based on this novel structure of Fin FET device.The simulation method with model extraction was valuable for improving TCAD simulation speed.In addition,the research contents for SEE had theoretical significance value to improving the reliability of circuits in deep nanometer process.