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Design Of Ultra-wideband CMOS Power Amplifier

Posted on:2021-01-27Degree:MasterType:Thesis
Country:ChinaCandidate:J ZhuFull Text:PDF
GTID:2428330614471435Subject:Electronic Science and Technology
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With the arriving of the 5G era,the development of wireless mobile communication technology requires high data transmission rates increasingly,thus ultra-wideband technology and high-frequency technology are receiving more and more attention.Monolithic microwave integrated circuit?MMIC?technology,which has uperior power characteristics and noise performance in the microwave band,contributes to the realization of high-performance radio frequency?RF?circuits.And the entire wireless transceiver,which integrates multiple functional circuits into a same system,needs a power amplifier to meet the normal operation in a larger bandwidth to make the system works normally.Therefore,it is of great significance and necessity to develop ultra-wideband power amplifiers with ultra-wideband characteristics,high gain,high stability,and low power consumption.An ultra-wideband power amplifier based on SMIC 40nm CMOS technology is proposed in this thesis.The main work is as follows:1)The peaking inductance at the output is adopted,and the use of parallel peaking technology expands the output matching bandwidth;2)A parallel resistor negative feedback structure is employed at the input to reduce the quality factor of the input,thereby a bandwidth expandation for input impedance matching is achieved;3)A circuit structure based on current-reused mode is adaopted,which can effectively reduce the power loss of the circuit while ensuring high gain of the power amplifier;4)The?-type matching network is used to match the input impedance,effectively improving the input impedance matching and expanding its bandwidth.The schematic and layout based on SMIC 40nm CMOS process are designed and simulated.Post-simulation results shows that in the broadband range of 15.0-27.0GHz,the power amplifier's input matching parameterS11 is lower than-9d B,and output matching parameterS22is lower than-10d B and the gain is higher than 10d B.The maximum power added efficiency of 19.6%can be obtained at the center frequency point.Power consumption is less than 25m W and it has superior linearity and stability.
Keywords/Search Tags:ultra-wideband, gain, power amplifier, power added efficiency, CMOS
PDF Full Text Request
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