Synthesis,characterization And Performance Of Flexible Ternary Polymeric Memory Device

To cope with ever-increasing demand for vivid information capacity,the traditional silicon-based memory devices are no more enough to fulfill the requirements of information storage.Concurrently,the pursuit of miniaturized and wearable electronic devices has grabbed the attention of researchers and practitioners around the globe.The researchers are continuously striving to find the latest and novel ways in order to meet the needs of high-density storage through different flexible devices like micro-wearable devices etc.Moreover,the micro-wearable devices based on ternary organic electrical materials have multi-component storage and flexibility that offer the optimum solution for the above-stated problem.In this study,we tried to synthesize and design one novel donor-acceptor alternated polysiloxanes named PBSePA-alt-PTPAMSi,in which 5-(7-bromobenzo[c][1,2,5]selenadiazol-4-yl)-N,N-diethylpyrimidin-2-amine(BSePA)and N-(4-(diethoxy(methyl)silyl)phenyl)-N-phenylbenzenamine siloxanes(PTPAMSi)are served as electron acceptor and donor moieties,respectively.The flexible resistive memory device based on PBSePA-alt-PTPAMSi will be further fabricated with sandwich architecture,and the obtained memory device is expected to display typical nonvolatile ternary write-once-read-many-times memory(WORM)characteristics.Following the chronicles of existing literature of Fu Lin's and his group,the successful synthesis of 5-(7-bromobenzo[c][1,2,5]thiadiazol-4-yl)-N,N-diethyl-pyrimidin-2-amine(PBTPASi)with different functional group of the polymer gave typical nonvolatile WORM device,so we expected that our polymer and device will also act as a typical nonvolatile WORM memory device.In addition,we also synthesized 4,7-dibromobenzo[c][1,2,5]oxadiazole(BOPA)and gained a targeted product in pure form that can be utilized to get corresponding siloxane compound through Heck reaction.Then the expected polysiloxanes of PBOPASi containing one electron donor and two electron acceptors can also give us a ternary WORM type memory behavior.