Analysis And Modeling Of Noise Mechanism In Saturated Region Nanoscale MOSFET

In order to effectively characterize the RF noise characteristics in the strong inversion region of nanoscale MOSFET,the noise modeling method is studied.Experimental observations and simulation results have shown that the dominant noise source of excess noise changes from thermal noise to shot noise with scaling of MOSFET.Moreover,experimental results and theoretical simulation results have proved that the particle noise of nanometer MOSFET is suppressed.Based on the noise analysis of nano MOSFET.In this paper,we propose an analytical model using the suppression factor for fast evaluation of the high-frequency channel noise in nanoscale MOSFETs for radio frequency and mixed-signal applications.The derived suppression factor expression can accurately predict the channel noise for nanoscale MOSFETs working in all regions of operations.It only depends on two major process parameters,and enables early delivery of the noise models before conducting complicated high frequency noise measurements.Finally,the noise model is applied to the neural network,which makes the calculation more convenient and fast.