The Analysis Of Carrier Correlation In Nanoscale MOSFET Based On Shot Noise

Experimental observations and simulation results have shown that the dominant noise source of excess noise changes from thermal noise to shot noise with scaling of MOSFET.Based on nano-MOSFET shot noise and mesoscopic conductors shot noise has the same of the physical origin, the application of mesoscopic physics shot noise theory in this paper, established a quasi-ballistic transport nanoMOSFET shot noise model, the expressions of shot noise suppression factor (Fano) in quasi-ballistic transport nano-MOSFETs are derived with considering Fermi correlation, Coulomb correlation and the combination of the two effects, respectively. The variation of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent with those from experiments and the theoretically explain is given.Then, a Monte Carlo investigation of shot noise in nanoscale MOSFET is presented, with attention to the relation between Fano with considering Coulomb correlation、the combination of the two effects and voltage, temperature and doping density of the source and drain contacts.