Research And Application Of Millimeter-wave Noise Modeling Of Nanoscale Mosfet In The Weak-inversion Region

Nanoscale metal-oxide-semiconductor field-effect transistors(MOSFETs)are widely used in RF and millimeter wave integrated circuits due to their high integration,high performance,low power consumption,and low cost.High-frequency noise model of MOSFET as the foundation of designing complementary metal-oxide-semiconductor(CMOS)low noise circuits is different according to the different process technologies.Therefore,the noise modeling of new devices is later than the fabricating of new devices.The development of scaling in CMOS technology for high frequency applications shows that its best high frequency performance has shifted from strong and moderate inversion regions toward weak inversion regions.However,most existing literature studies on the noise characteristics of MOSFETs not only focus on the device's strong inversion region and mid-inversion region,but also do not clearly indicate the dominant noise mechanism of the device in different operating regions.With the shrinking of the device size and the advent of 5G mobile communication,the current-noise characteristic of the weak inversion region of the device in the millimeter wave band has become a hotspot and a difficult point at home and abroad.According to this,the paper is based on the analysis of the high-frequency current noise model of the long-channel MOSFETs in the strong inversion region and moderate inversion region.The physical structure of the device for 130 nm MOSFETs was verified to be equally applicable to the millimeter wave band,and the noise mechanism in the two operating ranges was clarified.In combination with the small-signal equivalent noise model,the dominance of the substrate effect in the weak inversion region is proposed.In this way,a millimeter-wave current noise model of a weak inversion region of a nano-MOSFET is established,including a drain current noise,a gate induced current noise,and a gate-draincross-correlation noise.The accuracy of the established noise model was verified by comparing the simulation results of frequency and bias dependencies with the measured data of the literature.Finally,a four-noise parameter derivation based on the constructed noise model used to characterize its macroscopic noise behavior.The four-noise parameters of the device were simulated and analyzed.The consistency of simulation results and literature data verified the accuracy and practicality of the four-noise parameter model.The verification results also show that the current noise model proposed by the weak inversion zone has higher accuracy.