Shot Noise Suppression And Its Application In Nanoscale MOSFET

With scaling of MOSFET, the excess noise increases aggressively, and the dominant noise source shifts from thermal noise to shot noise. This crossover is discussed associated with the alteration of transport mechanism and the physical origins of thermal noise and shot noise. Based on quasi-ballistic current model of nanoscale MOSFET, the conversion condition is derived, which can predict noise behavior of nanoscale MOSFET correctly.To calculate the current noise quantitatively in nanoscale MOSFET, a unified scattering theory model is derived in this paper. The model seamlessly covers the whole range of transport regimes from coherent transport to incoherent transport. The model also includes the effects of Pauli exclusion and Coulomb interaction on shot noise. Thus, the model is suitable for studying the shot noise suppression of realistic nanoscale MOSFET.Then, a Monte Carlo investigation of shot noise in nanoscale MOSFET is presented, with attention to the relation between shot noise suppression factor and voltage, temperature and doping density of the source and drain contacts.