Research On The Resistance Switching Characteristics Of Multilayer Films With ZnO

With the development of information technology in the 21 st century,the market demands more and more for memory performance.At present,flash memory is the mainstream storage technology in the market,but it faces the challenges of short life,high cost,size can not continue to reduce.Therefore,people are constantly exploring new storage technologies to promote the development of science and technology and meet the needs of the market.Resistance changing memory appear to say most is expected to make its become the next generation of alternative flash memory,its industrialization has now become possible,and the resistance changing memory is a volatile storage technology,a huge advantage in terms of performance,for example,the resistance changing memory with metal-medium-such simple sandwich structure and can be miniaturized,is advantageous to the realization of three-dimensional high-density integration,as well as to read and write speed.Rheotropic memory is a device for logic storage based on resistance variation.Under the action of the electric field,the resistance of the device structure can be reversibly switched between the high resistance state and the low resistance state,which is called the resistance switching effect.Simply put,a resistance switch changes its resistance by controlling the change in current,and the current stops and stays the same until the reverse current pushes it back.If we define the high resistance state as the "1" of logical operation and the low resistance state as the "0" of logical operation,the data storage function can be realized.We know that most of the materials have resistance switching phenomenon more or less,and some of them have the potential to be applied in resistance changing memory,but to prepare resistance changing memory with good performance,we need to master the physical mechanism of resistance changing process.Preparation of devices with good performance of resistance switch effect is the first condition for research and development of resistance memory.To improve the performance of resistance switch,the first thing to do is to start from the material and structure,followed by the preparation process,and then the control of the conductive mechanism.At present,a single material has not been found to have good enough resistance switch characteristics to be used in resistance variable memory,so doping,plating multilayer film,embedded stack structure and other methods to improve the performance of resistance switch.In addition,external conditions also affect the performance of the resistance switch,so it is very important to study under different conditions,such as light,magnetic field,temperature,bias,etc.At present,a potential application value is the effect of light on resistance switch performance.This paper mainly studies the influence of light on the resistance switching effect of Si/[ZnO/BiFeO3]/Ta,Si/[C/ZnO/C]/Ta,Si/[C/BaTiO3/C]/Ta.In this experiment,ZnO/BiFeO3,C/ZnO/C and C/BaTiO3/C resistance storage devices with three structures were prepared by ultra-high vacuum magnetron sputtering system.X-ray diffraction(XRD)and scanning electron microscope(SEM)devices were used to characterize them,and the resistance switch performance was tested by ithley2400.The test results showed that the samples of several structures showed obvious resistance switching effect,and the light intensity had obvious promoting effect on the resistance switching effect of the device,but its performance was different,including switching ratio,tolerance and holding time.According to the i-v curve obtained from the measurement results,it can be seen that the three structures all belong to the bipolar resistance switching effect.