SiO₂ Memristor Based On Spin Coating And Its Resistance Property Analysis

With the rapid development of semiconductor technology,the arrival of the era of big data has brought new challenges to human data processing capabilities.Traditional transistor-based memory technologies,near device size,integration and storage speed,are approaching their limits,and a new type of storage technology is urgently needed to overcome these shortcomings.As a new type of nonlinear passive circuit component,memristor has wide application in bio-simulation,information logic operation and storage and circuit logic circuit design with its unique electrical characteristics,especially in the field of information storage has greater potential application value.Recently,memristor preparation based on silicon-based technology,mainly to produce resistive devices on monocrystalline silicon wafers.In addition,the use of printed electronic integration technology to fabricate flexible electronic devices has become a hot spot in the manufacturing industry.Compared to silicon-based microelectronics,electronic devices fabricated by printing require low equipment investment,low operational difficulty and manufacturing cost,and can be fabricated on any substrate material.These advantages make print manufacturing technology a multitude of applications where silicon-based microelectronic devices are not capable.In this paper,the SiO₂ memristor of single crystal silicon and flexible PI film were prepared around the preparation process and electrical property test of SiO₂memristor,and the resistance switch performance of the two devices was tested and analyzed using an Agilent B1500A semiconductor device analyzer.In this paper,a silicon-based Ag/SiO₂/Pt memristor was prepared by magnetron sputtering and spin coating.In this paper,a silicon-based Ag/SiO₂/Pt memristor was prepared by magnetron sputtering and spin coating.Among them,Ag and Pt were selected as the upper and lower electrodes of the device,and SiO₂ sol with a mass fraction of 40%was prepared,and the resistive layer of the device was prepared by spin coating.The test results show that the spin-coating speed is 4000 rad/s,and the device with the thickness of the resistive layer of 2.25?m has better repeatability,tolerance and retention characteristics.The upper electrode Ag and the lower electrode Pt of the memristor were prepared on the PI film by screen printing and magnetron sputtering.The device resistive layer was also prepared by spin coating with 40%SiO₂ sol,and it was laminated,packaged and cut through face-to-face.The flexible Ag/SiO₂/Pt memristor was fabricated,and the spin coating speed was set to 4000 rad/s,and the thickness of the corresponding resistive layer was 2.96?m.The test results show that the repeatability,tolerability and retention characteristics of the flexible Ag/SiO₂/Pt memristor are lower than those of the silicon-based Ag/SiO₂/Pt memristor,but in general,the result is relatively good.In this paper,the influence of parameters on the electrical resistance properties of flexible memristors is studied in depth.By setting three sets of spin-coating speeds of2000rad/s,4000rad/s and 6000rad/s,three different thicknesses of resistive layers are obtained.3.29?m,2.96?m,1.87?m.The test results show that the flexible Ag/SiO₂/Pt memristive device with a thickness of 2.96?m exhibits relatively good resistive behavior,while the devices with thicknesses of 3.29?m and 1.87?m have unstable resistance properties.In addition,external parameters such as limiting current and applied voltage amplitude also have an important influence on the electrical switching performance of the flexible Ag/SiO₂/Pt memristor.Under the applied voltage excitation of 1V,2V and 3V,the threshold voltage of the device is reduced sequentially.Three sets of limiting currents of 1mA,100?A and 10?A are set,and it is found that the resistive performance of the device decreases with the decrease of the limiting current.And the device has the best performance under the current limit Icc=1mA,which is too large to damage the device,and too small will reduce the information storage performance of the device.