Research On Oxide Film Nano Lamination Process And Resistance Characteristic

By varing the ratio of the constituents, compound films can exhibit various physical properties. Atomic layer deposition(ALD) techniques are based on sequential, self-limiting surface reactions and can grow compound films. In this work, ZnO/Al2O3 alloy films were prepared using ALD techniques. By adjusting the ALD pulse sequence, the ZnO/Al2O3 alloy film composition was varied from 0-100% ZnO. By adjusting the reaction temperature and the ventilation time of precursor, the ZnO/Al2O3 alloy film coverage scale were improved.Analyzing the topography and compositions of the alloy films used SEM and ICP-AES.Through the different temperature, different heat treatment time and heat treatment atmosphere regulation of three factors to explore the influence of annealing treatment on membrane resistance characteristics.The results show that ZnO/Al2O3 film Coverage scale were improved along with the precursor reaction time and deposition temperature increase. ZnO/Al2O3 which prepared with ALD technology grown dense and uniform, ZnO film thickness not reached design yet, due to exist of corrosive properties of ZnO film. We found that the resistance of film decreased with Zn content increased, the resistance of film has little influence on annealing.