Research On The Mechanism Of The Influence Of Electrode Materials On The Memory Resistance Of Inorganic Nano Film

The information revolution has promoted the rapid development of integrated circuit technology,which plays an important role in the information age.In addition,scientists and industry have higher and higher requirements for the storage information and data processing of electronic memory devices.In terms of information storage and processing,at present,miniaturized electronic memory has attracted the attention of scientists and industry.However,with the continuous reduction of the volume of electronic memory,the storage density of this kind of electronic memory device will approach its physical limit.At the same time,the continuation of"Moore's law"in integrated circuit technology will also be in trouble.The traditional computer system architecture,which is separated from information storage and processing,also suffers from a series of challenges such as"storage wall".In order to overcome the current bottleneck in storage,scientists are looking for new storage technology to break through the bottleneck in the current storage industry,which has been the dream of scientists and industry.However,with the emergence of memristor devices,scientists and industry have seen the hope to solve the bottleneck of the current storage industry.As the fourth basic component in circuits,memristor random access memory(RAM)devices are considered as one of the most potential candidates in the field of nonvolatile memory.Compared with other memory devices,the ram device has the advantages of fast read-write speed,high memory density,low power consumption and easy integration into the circuit.These superior performances of memristor devices can meet the needs of the next generation of new storage technology development.The operation of logic state and the simulation of brain like neural morphology can be realized by ram.This device has unique and excellent functions,such as integrating information storage and processing functions into a single component.The rise of memristor devices will lay a foundation for the future development of super high density information storage,high performance related computing and brain like artificial intelligence neural network in the era of big data and information.At present,the development of memristor devices is in a period of vigorous development.Many researchers and industry people have made remarkable achievements in this field.However,up to now,few people have studied the basic theory,materials and application potential of memristor.In the research work of this paper,the mechanism of the influence of electrode materials on the memristor performance of inorganic nano film and the related research of its application are mainly carried out.The functional layer materials of the memristor are SrCoO₃ thin film of inorganic nano perovskite type and Er₂O₃ thin film of rare earth metal.The memristor characteristics of the material are studied and the conductive mechanism is analyzed.The specific research work is as follows:1.The perovskite SrCoO₃ material was used as the functional layer of the memristor,and the memristor with Ti/SrCoO₃/Ti structure was fabricated.The memristor characteristics of the device were characterized by the chi660e electrochemical workstation instrument.Different Ag contents were embedded in the SrCoO₃ thin film,which significantly improved the SrCoO₃thin film's memory resistance characteristics.In the Ti/SrCoO₃/(Ag/SrCoO₃)_n/Ti(n=1,2,3)device,the multi-stage polymorphous memristor was observed.The emergence of the memristor effect in these electronic devices is explained by the gradual formation of conductive channels in the functional layer of such memristor devices.2.The effect of different top electrode materials on the memristor effect of perovskite SrCoO₃ as the functional layer of memristor was studied.At the same time,when the perovskite SrCoO₃ thin film material is used as the functional layer of the memristor,the influence of different top electrode materials on the conductive mechanism of the memristor is analyzed.As for the perovskite SrCoO₃,the effect of the top electrode material on the memristor effect and the conduction mechanism of the device is discussed.3.When Er₂O₃ film is used as the functional layer of memristor,Ag and ITO are used as the top or bottom electrode materials.The devices with electrode/Er₂O₃/electrode(Ag or ITO electrode)were prepared.The memory resistance characteristics of the device were characterized by using the electrochemical workstation of CHI-660E electrochemical workstation instrument.It is found that when ITO material is selected as the top electrode of the memristor,the switching direction of the device is clockwise.When Ag is selected as the top electrode of the device,the switching direction of the device is counterclockwise.Finally,the conductive mechanism of these devices is explained by the change of the conductive filaments and the potential barrier of the interface formed in the middle of the functional layer Er₂O₃.4.Based on the above research work,it is found that when Er₂O₃ thin film is used as the functional layer material of the memristor,the electrode material can control the switching direction of the memristor.Ag/Er₂O₃/ITO/Er₂O₃/Ag multilayer memristor devices are characterized by using the chi660e electrochemical workstation system.It is found that the devices exhibit complementary memristor effect.Complementary memristor effect can solve the current problems caused by current crosstalk.