Phase-controlled Large-area Growth Of MoTe₂ And MoTe_2-xO_x/MoTe₂ Heterostructures For Tunable Memristive Behavior

Since the graphene is found in 2004,novel two dimentional material is paid more and more attention for its unique structure and properties gradually.As a new kind electrical device,memristor is invented in 2008 by HP company first.Owing to the resistance of memristor changed with the applied voltage,the memristor can be used in neuromorphic simulation,date storage,logical calculation and so on.Therefore,it is significant to combine this two leading field.This paper is exploring the application of novel two dimentional material-MoTe₂.The main content is list as follows:?1?A facile method is developed to control phase in large area MoTe₂ and MoTe_2-xO_x/MoTe₂ heterostructures by precursor thickness in chemical vapor deposition for the first time and the other conditions are the same.The results show that the thin MoO₃ causes the 1T'MoTe₂.With the thickness of MoO₃ improve,there are a few 2H MoTe₂ in 1T'MoTe₂ film.When the thickness of MoO₃ is 25 nm,the 1T'MoTe₂ changed to 2H MoTe₂ completely.?2?We study the memristive behavior of two kinds of MoTe₂.The results show that the memristive behavior of MoTe₂ is highly influenced by phase and oxidization states in MoTe_2-xO_x/MoTe₂ heterostructure.The original 2H and 1T'MoTe₂ doesn't have memristive property while the surface oxidized 2H-MoTe₂ based MoTe_2-xO_x/MoTe₂heterostructures behave excellent and stable memristive behavior for at least 3000 cycles.?3?In addition,we compare the effect of metal electrode?Ag electrode and Al electrode?on heterostructure based memristor and perform the pulse tests about memristor from oxidized 2H-MoTe₂ based heterostructure,which shows a good mimic of biological synapses in neuromorphic system.