Research And Simulation Of New Material Memristor

Nowadays,the receiving,storing,processing and transmitting of the massive information promote the rapid development of science and technology.For traditional components,it is difficult to meet the requirements of high speed and low power consumption at the same time.The development and the related research progress of memristors,not only bring a revolutionary breakthrough to the development of non-volatile memory device,but also played a cornerstone role in areas such as brain-like artificial intelligence,and the memristors has the strategic significance in the development of information technology.The emergence of new organic and inorganic materials over the years has also provided new ideas for the preparation of memristors.Based on this background,this paper proposes memristors based on new materials,such as memristors of black phosphorus oxide,and uses the physical model in PSpice to fit experimental data and simulation data,paved the way for the research of further study of the new material memristor and the application of new material memristor in the actual circuit.Regardless of the actual device or physical model of the memristor,its volt-ampere characteristic curve is a figure 8 hysteresis curve,that is,under the voltage sweep,there exist a set process and a reset process,the set process is that the resistance of the memristor gradually changes from the high-resistance state(HRS)to the low-resistance state(LRS)with the change of the voltage.The reset process is that the resistance value of the memristor gradually changes from the low resistance state(LRS)to the high resistance state(HRS)at the end of the set process.Based on the above theoretical basis,the work of this article mainly includes:(1)We start with the traditional boundary migration model proposed by HP Labs to build an optimized memristor model.The HP model is characterized by a simple structure and a wide range of applications,but it has poor convergence,so a bipolar threshold behavior model is proposed based on this model.The bipolar threshold behavior model has a good switching characteristic,the convergence is excellent and adjustable,but the adjustable range of the output current is small,so an adjustment coefficient n is introduced to make the adjustable range of the current larger based on this model.This improvement is beneficial for the data fitting.In addition,through the study of the model,it can be obtained that the resistance of the memristor is inversely proportional to the switching resistance ratio,the initial resistance value,and the mobility of the memristor.(2)In terms of the selection of new materials,the two-dimensional material black phosphorus was first selected because the material structure is similar to graphene.After studying the characterization and experimental test of the black phosphorus memristor,the above model was used to fit the experimental data,and it was found that the simulation data can better fit the experimental data with the appropriate parameters set.However,the switching characteristics of black phosphorus memristors is not obvious,therefore,in addition to black phosphorus,the two-dimensional inorganic materials MXene(transition metal carbides,carbonitrides and nitrides),organic compounds of iridium,and two ferrocene polymers were selected for the preparation and research of memristors.Since these types of memristors exhibit good switching characteristics during testing,certain points with constant resistance values can also be better restored during the data fitting process.It is proved that this model is suitable for most memristors with good switching characteristics.In summary,as the fourth passive device discovered in recent years,the memristor has shown excellent performance in low power consumption,nonvolatile memory,and brainlike research,the memristor has broad application prospects.With the deepening of theory and experiments,the performance of memristor will be more excellent,and the application range will gradually increase.