Positioning CMOS Digital Integrated Circuit Gate Oxide Breakdown And Improvements

With the advancement of electronic technology,the reliability of electronic components is increasing.Customer's quality requirements of electronic components production become strict.In order to ensure the improvement of product reliability,failure analysis of failure product and improvement of products is very important.Discovery failure locations and accurate analysis can detect hidden defects or problems.To take the necessary improvements can reduce the recurrence of failure;effectively improve product yield and reliability.Gate oxide of CMOS digital integrated circuit is the most important structural.Because the gate oxide layer is very thin,it is very likely breakdown in the production and use.Breakdown will affect the normal operation of the circuit.Because the gate oxide layer can not be restored after penetrating,so the production and use should be timely detection,accurate positioning,analyze the causes and take action to avoid the breakdown of the gate oxide layer.This paper discusses the positioning method of CMOS digital integrated circuit gate oxide breakdown based on a large number of fault cases,such as programming test,liquid crystal analysis.Continue to analyze the reasons of CMOS digital integrated circuits gate oxide breakdown,give Corresponding improvement measures for specific reasons.The research process used a variety of EDA software for product testing and design.Use STS2106 A digital integrated circuit test software to confirm the failure phenomenon.Use OrCAD / Pspice software to draw the circuit diagram of the product,verify and improve the validity.Using the L-Edit software to draw the product's territory,and the DRC and LVS verification,to ensure that the layout and logical relationship with the circuit requirements.By improving the BH2003 decoder output structure,eliminating the output side of the gate oxide gate breakdown the negative impact.Through the analysis of existing products ESD ability,improve the structure of existing products.The ESD ability of products increased to 3000 V.Two improvements to achieve the purpose of improving product reliability.