Design Of AMOLED Pixel Circuit And Integrated Gate Driver Circuit In Amorphous Metal Oxide Thin-Film Transistors

The active matrix organic light emitting diode(AMOLED) display is considered as the next generation main stream display technology. Amorphous metal oxide semiconductor, such as indium gallium zinc oxide(IGZO) is a promising thin film transistor(TFT) technology for AMOED display. Therefore, this thesis focuses on AMOLED pixel circuit and integrated gate driver circuit based IGZO TFTs.For the AMOLED pixel circuit, the three factors influencing the display performance are summarized firstly, including the TFT threshold voltage shift, the degradation of OLED and IR drop on the power lines. The methods for compensation these factors are then analyzed. Finally, the thesis presents a new AMOLED pixel circuit design. The circuit simulation results show it can effectively compensate the influence of the above three factors.For the of integrated gate driver circuit, the widely used techniques including the floating gate, serial connected two TFT and double clocks controlling are analyzed and compared. It is found that the three techniques are not suitable for TFTs with negative threshold voltages. Then the thesis presents a new circuit design. Circuit simulation results show that it can solve the negative threshold voltage issue.