| Printable display is gaining momentum recently with the development of solution type of organic light emitting diode?OLED?materials.At present,printed oxide thin film transistors?TFTs?have exhibited good characteristics and are promising for display backplane.Printed oxide TFT still meets some challenges toward practical display driver,although great progress has been made in solution processed metal oxide thin film transistor.Among these challenges is to inkjet print higher density oxide TFT array in large area for high resolution of display.The existing reports on increasing the resolution are mostly based on Si/SiO2 substrates and failed to realize the inkjet printing preparation of patterned gate devices.Therefore,in this dissertation,a self-aligned and surface-hydrophobic modification process was used to realize the inkjet printing preparation of high-resolution oxide thin-film transistor arrays with independent gate structures on an alkali-free glass substrate.In this dissertation,the preparation of functional layers of non-alkaline glass-based oxide TFTs was first studied.In order to prepare the independent gate IGZO-TFT devices,different nitrate solutions were used as the ink.It was found that the best performance of device was obtained in the case of aqueous solution.The IGZO-TFT arrays prepared at 350°C exhibited good homogeneity,linear mobility above 4 cm2?V-1?s-1.The stability of Al2O3 after passivation was good.Next,the paper systematically studied the contact angle and its variation of surface hydrophobic materials.Polymethylsilsesquioxane?PMSQ?with good hydrophobicity,high temperature resistance and high transmittance was selected as the hydrophobic material.Self-hydrophobic structure was fabricated by self-aligned gate lithography.Inkjet printing preparation IGZO-TFT of 10?m gate was successfully realized.It's linear mobility is 3.3 cm2?V-1?s-1,switching ratio more than 108,and shows good homogeneity. |
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