Study On The Resistive Switching Properties And Conduction Mechanism Of RRAM Based TaO_x Material

With the development of science and technology and China's third consumption structure upgrading and transformation,highly-integrated electronic consumer products are more and more favored by people.Flash memory as a mature nonvolatile memory,having been widely applied due to its operating speed,storage density and other characteristics.However,with the shrinking of the size of the Flash device unit,its development has received a great deal of limitations,So the research of new nonvolatile memory has come to a new climax.Among them,Resistive Random Access Memory(RRAM)has become one of the advantageous contenders for new memory.In the past ten years,RRAM has been rapidly developed.TaO_x materials have become the hot topics of oxide-based RRAM because of their excellent endurance and fast erase speed(<150ps).The devices fabricated in this thesis are all grown by RF magnetron sputtering,while the intercalation is preparation by ion beam sputtering.At last,the resistance changing performance and transmission mechanism of the device are studied and analyzed by using the devices such as AFM,XPS and semiconductor parameter analyzer.First,the optimal process conditions for the preparation of non-intercalated devices were obtained.After the insertion of 1 nm thin-layer metal Ti or Hf between the upper electrode and the resistive layer,the electrical properties of the three devices were compared and the property of Ti intercalation device was the best.Finally,the film surface of the three devices were characterized,linear fitting and resistance change model was established and found that the transmission mechanism has not changed,the addition of thin metal layer only acts as a series resistor and the role of the oxygen storage layer to prevent the device hard breakdown.Based on the above,the influence of the Ti layer thickness on the device performance was investigated.By comparing the electrical properties of four different thicknesses of Ti intercalation devices,it is concluded that the performance of thicker Ti intercalation devices will decrease.Finally,through the linear fitting and model building,it is concluded that the thick Ti intercalation can reduce the performance of the device.Through the experiments in this thesis,it is provides reference for improving the stability of ion-based RRAM,and supports certain theoretical significance for further application of resistive memory in industrialization.