Study Of Physical Mechanism And Modeling On Metal-Oxide Based RRAM

Resistive switching random access memory(RRAM)has rapidly emerged as one of the most promising candidates for the ultimate memory device due to its prominent performances,e.g.,ultra-low power consumption,rapid operation speed,excellent switching endurance,reliable data retention and outstanding scaling potential.However,on the way toward its practical application,there still leave many problems to be solved,e.g.how to select the most appropriate resistive switching material?How to suppress the sneak current issue in the integrated crossbar structure?To solve the above problems thoroughly,the research on the physical mechanism involved in the resistive switching process is of more significance.The thesis focuses most on the research on the physical mechanism of resistive switching,the following aspects are included:firstly,experiments are conducted on the Pt/HfO_x/TiN and Pt/TaO_x/TiN devices for many of their advantages,e.g.they are made of simple components,easy to prepare,and compatible with CMOS technology;secondly,by implementing the appropriate electrical manipulation schemes,the devices exhibit the multi-level bipolar,complementary,and parasitic resistive switching behaviors,moreover,through limiting the negative bias range,the parasitic resistive switching effect with reversible switching performances and non-volatility is demonstrated in the complementary resistive switching mode,which can be explained by the changed characteristics of the size of the filament;lastly,Comsol Multi-physics software is utilized to simulate the resistive switching process,as a result,the simulated typical I-V curves are obtained similar to the experiment results,which offers another different take on the analysis of the conducting mechanism.