Research On Low-Frequency Noise Of Metastable Phase VO₂?B? Thermistor

Infrared detector has been the focus of the military field since it's appearance.In the1990s,the appearance of uncooled infrared focal plane arrays?UFPA?detector led to the further upgrade of military equipment,especially in the aspect of individual soldier warfare.With the popularization of infrared imaging techniques'application,the infrared imaging equipment with UFPA detector as the core,plays an increasingly prominent role in public safety,industry,medicine and other fields.The expanding market of uncooled infrared detector attracts more and more attention.The work content of this paper is to prepare VO₂?B?material with excellent performance,for further application in the thermal-resistance layer of UFPA detector's pixel.The composition of VO_x in industrial production is complex and difficult to control,while the composition of VO₂?B?material with mature process is relatively simple and certain.The temperature coefficient of resistance?TCR?of VO₂?B?material is large and the resistance value is moderate,and not like VO₂?M?/VO₂?R?,there is no phase transition within the operating temperature range,with good 1/f noise coefficient,well suited for the thermal-resistance layer of UFPA detector's pixel.The main results of this paper are summarized as following:?1?VO₂?B?films were deposited in situ by magnetron sputtering on silicon wafers which is with SiNx on its surface,this process don't need to anneal.?2?The surface morphology and composition of VO₂?B?thin film were tested by XRD,SEM and laser confocal Raman spectrometer;the resistance value,which was used to calculate TCR,was tested by four-point probe instrument.The results showed that the prepared VO₂?B?film has single composition,high crystal inity,smooth surface,suitable resistance value and high TCR.?3?Two kinds of metal electrodes?Ni/Au?Ti/Au?were deposited on the surface of VO₂?B?films by ultraviolet lithography and electron beam evaporation,the designed metal pattern was obtained by lift-off process,It is encapsulated in DIP ceramic package as a thin film resistor for low frequency noise testing.?4?The low-frequency noise test circuit was designed for VO2?B?film resistor,the low-frequency noise characteristics of thin film resistors with two kinds of electrode materials were tested,the condition of thin film resistance's low-frequency noise was analyzed.