| Infrared (IR) detectors and focal plane arrays (FPAs) have found applications in military, space and commercial circumstances. However, of the IR detectors, the photon detectors need to be cooled, and the bolometers need a DC bias. The available pyroelectric FPAs were made by the hybrid technology, which is complicated and expensive, and also has some performance drawbacks. Therefore, a novel FPA, a monolithic pyroelectric FPA, was proposed. But some problems, such as how to get high quality pyroelectric films, whether these thin films can be integrated with Si, and how to improve the detectivity, need to be solved.; In order to get a ferroelectric thin film with the desired quality, a Mn+3 and Sb+5 co-doped PZT (PMSZT) was designed. Compared with PZT, PMSZT showed better properties, such as lower Curie temperature, lower dielectric constant and higher pyroelectric coefficient. SEM, AFM, AES, XRD, GADDS, and RBS were used to study thin film microstructures. IR response, P-E hysteresis loop, and pyroelectric coefficient were mainly used to characterize thin film properties.; High quality PMSZT thin films with large uniform area were grown on native (100) silicon substrates with LSCO as the bottom electrode. It found that PMSZT thin films on a Si substrate with LSCO as the bottom electrode have preferred [100] orientation, thus showing high ferroelectric properties. The pyroelectric coefficient for the PMSZT thin film on Si ranges from 1.25 to 6.5 × 10−7 C/(cm2 K) in the temperature range of 40 to 120°C. High detectivity was also obtained from the PMSZT thin film on Si.; Fast thermal annealing and substrate holder rotation were employed to obtain a high quality thin film. The responsivity could be improved by reducing the thickness of the ferroelectric film and by fabricating air-bridge. FPAs were fabricated using lithography.; By growing PMSZT on different substrates, it is found that the strain in the PMSZT film influences the ferroelectric properties, and that compressive stress enhances the polarization. |
