Research On Design Methods For The Strain-Gated Devices Based On ZnO Materials

The strain gate device is a general term for a series of electronic equipment with piezoelectric effects based on piezoelectric properties.In the design of digital circuits,piezoelectric logic nano-devices with piezoelectric effect are a new research area in recent years.Most of the piezoelectric devices designed in the early days used materials such as barium titanate and quartz crystal.Because of the instability of the material,this equipment cannot use for a long time.With the development of electronics and materials science,the advents of nano-piezoelectric devices have largely solved the shortcomings of the original piezoelectric devices.Therefore,this subject takes nano piezoelectric devices as the research object,and analyzes the performance characteristics of basic strain gate devices based on nano-materials,and studies the design method of strain gate device based on zinc oxide nano-materials,and basing on the strain gated as the foundation module,the paper designs a serious of circuits.The main research work and achievements of this topic are as follows:(1)The subject discusses the basic principle of the piezoelectric gate device and the logic gate.Firstly,the basic concepts and characteristics of strain are expounded,and strain is the natural property of some special materials.Then,the subject introduces the basic principle of piezoelectric gated transistors.Piezoelectric gated transistors can apply strain in the interface region of the semiconductor to receive a piezoelectric potential.Finally,it introduces the basic functions of existing logic gated devices,like NAND gate,NOR gate and XOR gate.(2)The subject analyzes the component modules and performance of the basic strain gate device.Firstly,it analyzes the two basic modules of the zinc oxide strain gate devices,such as strain-gated transistors and strain-gated inverters.Secondly,it analyzes the performance of zinc oxide piezoelectric NAND gates,NOR gates and XOR gates and the relationship between the output signal and input signal.Then,the components of the GaN strain gate device are analyzed.Finally,it analyzes the existing GaN strain gate device,like the one and a half adder.(3)The subject studies the design method of strain gate device based on zinc oxide nano-materials.Firstly,according to the current research status,two basic strain gate devices,such as AND gate and OR gate,are proposed.At the same time,according to the analysis of zinc oxide material properties,the relationship between the input and output signals of AND gate and OR gate can be derived.Secondly,considering the similarity between the zinc oxide and the gallium nitride material,it proposes to design a new one-and-a-half plus using zinc oxide.According to the characteristics of zinc oxide materials,the truth table of zinc oxide one-half adder is deduced.Finally,considering the existing limitations of the technology,the idea of combining two strain gate devices is proposed.And correspondingly designed the amplifying circuit and the motor circuit,at the end of the subject,a plurality of gate circuits and a gate module having multiple functions are designed.The experimental results show that the strain gate device can realize the conversion of strain signal to electric signal and has a very broad application prospect in NEMS nano-electromechanical system.At the same time,it can be widely used in the fields of circuits and medical equipment to deal with some quite complex and cumbersome operations.