Study On Characteristics And Application Technology Of New Wide Band Gap Semiconductor Device

Based on the national key research and development program "high efficiency motor system for industrial process",this paper studies the characteristics and application technology of the new wide band gap semiconductor device converter system.With the continuous improvement of motor speed and motor power,the motor system requires more and more power electronic devices.At present,the PWM converter system usually uses silicon based power electronic devices,which usually has the characteristics of low switching frequency and high switching loss,which will lead to a series of problems such as large torque ripple,long dead time,large voltage harmonics,low system efficiency and so on.These problems restrict the further optimization of the motor system in the aspects of voltage stress,switching frequency,power density and efficiency,so the motor system needs new power electronic devices with better electrical performance.Due to the excellent physical and material properties of the new wide bandgap semiconductor materials(Si C,Ga N,etc.),it is possible to solve the above problems.The research on the characteristics and application technology of the converter system based on the new wide bandgap semiconductor devices has become a hot topic in the field of science and has important theoretical and practical significance.In this paper,the development history of the fourth generation of power electronic devices is introduced firstly,and then the characteristics of common power electronic materials are compared and analyzed.The performance advantages of the fourth generation of wide bandgap semiconductor devices are quantitatively pointed out,and the research status of the wide bandgap semiconductor devices and the current converter system of wide bandgap semiconductor devices at home and abroad is analyzed.In this paper,the performance of silicon carbide MOSFET module and IGBT module is compared in detail.Compared with IGBT,silicon carbide MOSFET has the advantages of high switching frequency,fast switching speed and small switching loss.In this paper,a 50 k VA new high efficiency and high power density converter system with wide bandgap semiconductor devices is developed.In order to reduce the volume of the converter system,the cascade bus of the converter system is optimized.In order to enhance the heat dissipation ability of the converter system,the heat dissipation and cooling system is optimized,and the structure of the entire converter system is optimized to reduce the volume,so that the power density of the converter system is higher.In this paper,a classical model reference adaptive system is designed based on the principle of superstability design.In order to improve the performance of the high efficiency motor system,accelerate the response speed of the control system,and make the motor system more resistant when subjected to load disturbance,this paper designed the model reference adaptive high efficiency motor control system optimized by cerebellar neural network,and carried out the simulation verification.In this paper,a new type of power device converter system with high power density was combined with a model reference adaptive efficient motor control system optimized by cerebellar neural network to build an experimental platform for the motor system,and the performance of the motor system was evaluated.The simulation results and experimental results show that the motor system designed in this project has a good performance in system stability,anti-load disturbance performance and robustness,and meets the demand of dynamic performance of efficient motor system,which has important theoretical value and engineering practical significance.