Research On 55nm RF CMOS Low Power Low Noise Amplifier

With the rapid development of radio frequency integrated circuits and wireless communication technologies,CMOS radio frequency transceiver technology has presented a trend of higher performance and lower power consumption.Low Noise Amplifier is a key component of front-end circuit for RF receiver,research on whose performance and power consumption plays a significant role for wireless communication system.A 2.4GHz low power narrowband low noise amplifier is designed and implemented using TSMC 55nm RF CMOS process.Firstly,Research significance and status of low-power RF front-end circuits in 2.4GHz ISM band are introduced in the thesis.Combined with basic noise theory and classical two-port network model,analyses of key performance parameters,like noise and gain,are performed towards LNAs with different input impedance matching structures.Secondly,based on design specs,two-stage cascading common source structure with current-reuse technique is utilized to effectively reduce power consumption.Moreover,sub-threshold biasing technology is added to increase the effective trans-conductance and gain of transistors as well as reduce noise figure.The use of LC resonant network instead of bias large inductor series with gate greatly cuts down the occupation of the chip;On the other hand,the application of the improved source-inductor negative feedback structure and source follower structure achieves magnificent input and output impedance match for the circuit.Finally,layout design of the proposed amplifier is carried out,and simulation results are analyzed.The circuit design process,pre-simulation results,layout design process and post-simulation results of the low-power low-noise amplifier are presented in this paper.The simulation results have shown that the operating current is around 1.88mA under voltage supply of 1.2V,and the power consumption of core circuit is about 2.3mW.The S parameters are as follows.S₁₁ is changed within-10～-25dB with S₁₂ being changed within-60～-65dB.Gain is 26.6dB and noise figure is less than 2.7dB.Thus the designed low noise amplifier meets the design specifications,being able to be applied to low power RF front-end circuits.