Study On Main Factors Affecting Photoelectric Performance Of GaN-based LED Devices

With the worldwide energy crisis and increasing environmental pollution,energy conservation and emission reduction has become an important means to solve the current energy and environmental problems.The light-emitting diode(LED),as a new type of green lighting source,has gradually LED the future development trend of the lighting sector.Therefore,the research on LED,especially the research on the gan-based blue LED which is the basis of white LED,has attracted great attention from researchers all over the world.This paper aims to analyze the main factors affecting the photoelectric performance of LED devices,analyze the influence of current and junction temperature on the photoelectric performance of LED devices,and propose ways to improve the LED performance.In this paper,the basic structure,polarization,physical properties,chemical properties and photoelectric properties of GaN are analyzed,and the way to improve the extraction efficiency of LED light is proposed.In addition,the factors influencing the photoelectric performance of gan-based LED are analyzed from the aspects of current and junction temperature.Finally,the way to improve the extraction efficiency of LED light by using composite photonic crystal structure is proposed,and the multiple of improvement is pointed out.