Design And Model Research Of Inductors In MMIC

With the rapid development of system-on-chip(SOC)in radio frequency integrated circuits,low-cost,easy-to-integrate on-chip spiral inductors have become the focus of current research.The on-chip spiral inductor can be applied to multiple modules of a radio frequency integrated circuit,and its performance directly affects the overall performance of the circuit.However,parasitic effects of the inductor at high frequencies can cause serious performance loss in the inductor.Therefore,an effective analysis and establishment of precise circuit model of the on-chip spiral inductor and mastering the optimal design criteria of the inductor are important topics in current inductor research.This thesis first studies some basic theory of on-chip spiral inductors,and analyzes the main loss mechanisms of on-chip spiral inductors in detail.For the traditional inductive single ? model without considering the high frequency parasitic effects,an improved single inductor ? model was proposed.The model uses a parallel structure of inductors and resistors to represent the skin effect and proximity effect at high frequencies of the inductor.The unidirectional coupling of the substrate is simulated using a structure in which resistors and inductors are connected in series and in parallel with the capacitors.Using two-port network analysis method,combined with the quasi-linear function method and linear fitting method to extract the value of each component in the circuit.In the given frequency range,the electromagnetic simulation results of the inductor under HFSS,the traditional inductance single ? model and the simulation results of the main performance index of the improved ? inductor single ? model are compared.The results show that the accuracy of the improved single ? model is higher than that of the traditional single ?model.In a wider frequency band,the accuracy of a single ? model still falls short of the requirement.Therefore,this thesis continues to study the double ? model of inductance and proposes a simplified and improved double ? model of inductance.The same method as the single ? model was used for the simulation analysis.The results show that the improved double ? inductor model can better reflect the actual working state of the inductor.Using the proposed improved inductor double ? model,the influence of the coil parameters(number of turns N,inner diameter D,spacing S,line width W,thickness t)on the on-chip spiral inductor is analyzed through simulations,and the inductance parameters are summarized.The method of optimization.Based on the 0.25?m Ga As p HEMT process,a 6~12GHz ultra-wideband low noise amplifier was designed.Using the spiral inductor model presented in this thesis,several important performance parameters of the amplifier are simulated and analyzed.From the simulation results,it can be seen that in a given frequency range,the amplifier power gain G is greater than 20 d B,and the noise factor NF is less than 1.9d B.The wave loss S11 is better than-7d B,and the output 1d B gain compression point P1 d B is greater than 10.6d Bm to meet the design requirements.