Simulation Of Silicon Anisotropic Corrosion Based On Continuous CA Method

With the development of new technology,new structure and new applications of micro sensor,micro actuator and micro system are also known as MEMS,and there is a growing demand for computer-aided engineering and design system.The etching process simulation as an important part of MEMS CAD has been widely studied by scholars at home and abroad for silicon anisotropic etching process and put forward various simulation model,in general can be summarized as the geometric model and the atom model.Based on these models developed numerous process simulation software,has been integrated into MEMS CAD.The etching process simulation in different models,the differences in the core and the simulation accuracy and efficiency of the simulation,can balance the appropriate model for the simulation scenario specific,thereby reducing a device from concept into the cost of required commercial products and improve the level of technology.This paper focuses on the continuous CA model.Based on the continuous CA model,a two-dimensional and three-dimensional anisotropic etching algorithm for monocrystalline silicon is established.In the simulation of two-dimensional anisotropic etching of silicon in the output,the use of C language programming algorithm and simulation results by Matlab.In the simulation of 3D anisotropic etching of silicon in the abstract three-dimensional anisotropic etching of the silicon surface algorithm for(100)surface,the edge along the <110> orientation,the use of Java language computer programming on the corrosion algorithm,and through the PhotoShop cell array according to the console spring height value output corrosion results of three-dimensional map,corrosion algorithm according to the structure of silicon using combination of static and dynamic storage method based on silicon substrate,the dynamic CA method to improve the efficiency of simulation,the calculation of different types of atoms of the value of life according to the input mask pattern and the corrosion rate,when the life value is less than 0,the atom is removed,the adjacent atoms in surface corrosion was added to the front end of corrosion.In the two-dimensional anisotropic corrosion simulation,according to the factors affecting the simulation accuracy and efficiency of simulation for CA model in the analysis and improvement of corrosion algorithm,including D parameter determination,cellular array density,dynamic and static algorithm the CA algorithm and the comparison of time compensation.The results show that the simulation results and experimental results and analysis theory,the time compensation algorithm,the simulation precision is obtained by nature to enhance the simulation of lateral etching of silicon in two-dimensional isotropic,the simulation results of single circular openings in the use of the original model,the simulation results of eight deformation after compensation.The simulation results as expected round.The use of several commonly used mask of silicon corrosion were simulated and the three-dimensional concave convex simulation,simulation results and experimental results agree well,convex simulation,considering the fast corrosion of crystal face(313)surface,in-depth research of rectangular structure cutting table,non-cutting table rectangular structure,selection of circular mask was simulated and analyzed the cutting rules for complex graphics compensation design has laid a good foundation.