Design Of The RF Front-end For Bluetooth Receivers Based On 0.18?m CMOS Technology

With the increasing use of wireless communication systems,the demand for low-power,low-cost RF wireless transceiver chips is increasing.The Bluetooth wireless communication technology applied in the close range is widely used to implement data security connection between handheld and fixed devices because of its low power consumption,low cost,high integration,and complete protocol.The wireless receiver is an important part of the Bluetooth communication system and directly affects the implementation and application of Bluetooth technology.This paper mainly studies the design of RF receiver front-end circuit applied to Bluetooth wireless communication.Firstly,the research background,significance and domestic and international research status of Bluetooth wireless receiver are introduced.Then,based on 0.18?m CMOS process,a RF receiver front-end circuit using low-IF receiver structure is designed,which consists of low-noise amplifier and mixer.The low-noise amplifier uses a common-source and common-source structure to achieve a single-turn dual-function,while using an active load instead of a resistive load and using it to form a feedback loop.In the design process,the size of the MOS transistor in the amplifier is determined from the perspective of balanced output of the signal,and then it is analyzed how to balance the input matching,noise figure,and gain to obtain a good overall performance index.A folded mixer circuit was designed based on the double-balanced Gilbert structure.The automatic gain control module was added,and the active diode load was used,which effectively saved the area of the chip and reduced the noise of the circuit.The simulation results show that the designed RF receiver front-end circuit input matching is-23.38 dB,the voltage conversion gain is 42.26 dB,the noise figure is 7.034 dB,the input third-order intercept point is-14.03 dBm,and the power consumption is 6.99 mA.It has a good overall performance index.