Genearation Of High Voltage And Repetition Frequency Nanosecond Pulse Based On SI-GaAs Self-breakdown Sample

Switch is one of the most core devices in pulse power technology.The performance of the switch determines the overall performance of the system to a certain extent.Long life,solid state and high repetition frequency are the mainstream development direction of current pulse power switch.In this field,researchers have continuously explore switch technology,developed new switching devices,and made rapid development of pulsed power technology,and have achieved certain applications in fields such as electromagnetic pulse,nuclear physics,and civilian use.In our study of SI-GaAs breakdown strength tests,we found that SI-GaAs samples with asymmetric electrodes can be broken down under low electric field conditions,outputting high-voltage nanosecond electric pulses,and after breakdown,keep conducting and maintain a certain locking electric field.This breakdown of the sample is repeatable,and it is expected to form a new type of high-voltage nanosecond pulse switching device.Based on the experimental study of this breakdown phenomenon,the paper refers to MOSFET devices and conducts three experimental researches on high-voltage nanosecond electric pulses from Si-GaAs body breakdown samples:1.Based on MOSFET control,controlled-repetition-frequency breakdown of SI-GaAs samples was realizedBased on the study of the basic characteristics of self-breakdown samples,three experimental schemes based on high voltage MOSFETs were designed to realize the repetition frequency operation of SI-GaAs self-breakdown samples under MOSFET control.In the condition of power supply voltage of 1500 V,the controllable repetition frequency is 3-10 Hz,the rising edge is 4.131 ns,the pulse width is 34.2ns,and the voltage amplitude is 1248 V.At the same time,the experimental results show that the SI-GaAs self-breakdown sample has pulse compression function.Based on this,the influence of different energy storage capacitors on the output repetition frequency electric pulse was explored.The smaller the capacitance value,the narrower the pulse width and the smaller the rising edge,but the capacitance is too small to produce nanosecond electrical pulses.2.Experimentally studied the breakdown delay characteristics of SI-GaAs samplesUsing MOSFETs to control the voltage loading,the high-voltage nanosecond electrical pulses output from the SI-Ga As self-breakdown sample and the delay time of the applied voltage were measured.Experiments show that the nanosecond high-voltage pulses output by the SI-GaAs self-breakdown sample have magnitude time delays.Repeated experiments have shown that the delay time is random within a certain range.3.The experiment verified that the triggering and breakdown of the SI-GaAs low-resistance conduction state were not synchronized.Design the experimental circuit.First,a high voltage was applied to the SI-GaAs sample to break it down.Then use MOSFET to control discharge circuit current-limiting resistance.It was found that after the sample broke down,if the resistance of the discharge circuit dropped,the sample could output normal nanosecond high-voltage pulses.This proves that the low-resistance state of the sample is not derived from the initial breakdown of the sample.Finally,using the characteristics of delay and low-resistance state triggering,some characteristics of the phenomenon of high voltage nanosecond electric pulse generated by SI-GaAs self-breakdown are explained.