| Nanosecond and sub-nanosecond ultrafast high-voltage electrical pulses have broad application prospects in national defense,scientific research and industrial fields such as ultra-wideband radar,low-temperature plasma technology,biomedicine and laser technology,etc.In recent years,with the development of pulse power technology,high-frequency,high-power,semiconductor power switches capable of generating ns and sub-ns narrow pulses have become an important development direction of pulse power switches.Based on the realization of electrically triggered SI-GaAs nonlinear conduction,we designed a new type of pulse compression diode.This new type of SI-GaAs-based pulse compression diode exhibits good pulse compression effects in both MIM and MIP structures.The pulse compression ratio and leading edge compression ratio far exceed those of conventional pulse compression devices such as FID,DBD and magnetic switches.But there are still problems such as electrode ablation,large leakage current and short life have not been resolved.Based on the research of pulse compression diodes with MIM and MIP structures,we propose and prepare a new sample of PIPN structure.This paper mainly completes the following three parts of work around the structure design and performance test of the sample:1.In response to the testing requirements of new pulse compression diodes,a high-voltage pulse power supply with adjustable rising edge of 40ns?1?s,adjustable pulse width of 70?100?s,maximum output voltage of 4500V and pulse current of 10A has been developed.The compression characteristics of the new pulse compression diode are closely related to the characteristic parameters,such as the rising edge of the previous pulse,voltage,and current.Therefore,this test requires the rising edge of the previous pulse to be adjustable,the voltage is greater than 3kV,and the repetition frequency is greater than lOkHz.On the basis of high-voltage MOSFET devices,the adjustment of the rising edge of the previous pulse is realized by changing the drive current.Meet the requirements of this article for PIPN sample life and pulse compression performance testing.2.Based on the failure research of MIM and MIP structural samples,a new PIPN structural sample was designed and prepared.Based on the research of the mechanism and failure mechanism of MIM and MIP samples,a design idea of using pn junctions to replace Schottky junctions in MIP structures is proposed.After design and calculation,structural parameters such as the thickness and concentration of each epitaxial layer were determined.And experimental samples were prepared using MBE epitaxial technology.3.Using the developed high-voltage pulse power supply,the life,the relationship between excitation voltage and du/dt of PIPN sample,pulse compression characteristics of PIPN samples were experimentally studied.The results show that the PIPN sample can compress a pulse output signal with a pulse width of 166ns and a rising edge of 50.72ns to a pulse width of 12ns and a rising edge of only 1.6ns,which has good pulse compression performance;PIPN samples can run more than 3 million times at a repetition frequency of 1kHz,which is 100 times longer than the MIP structure samples(which can run 30,000 times);PIPN samples have certain current threshold and voltage threshold when triggered by electrical pulses,When the power supply voltage is greater than the threshold voltage of 1700 V or the trigger current is greater than the threshold current of 3.33 mA,the sample can trigger the pulse normally. |
PDF Full Text Request