| In this thesis,the influence of external disturbance on the porous layer of InP was studied.Electrochemical etching based on the assisted electron beam exposure technology and laser interference technology were used to fabricate the hemispherical radial porous structures of InP,respectively.The hemispherical radial porous structures have the potential appllicaiton for the biomimetic compound eye.By studying the influence of external disturbance on the porous layer of InP during the electrochemical etching,the correlation between the peeled porous layer,disturbance and oscillation curve was illustrated,and it was explained that the application of disturbance can be helpful to transfer the porous layer of InP.And the method based on the disturbance also provided the basis for the transfer of the hemispherical radial porous structure of InP.A mask with an array of apertures on the InP was prepared by electron beam exposure technology,and then electrochemical etching was performed to fabricate hemispherical radial porous structures.In addition,the effects of etching time and current density on the formation of hemispherical radial porous structures are also discussed.In the combination of laser interference and electrochemical etching,a dual-beam optical system was established based on the principle of laser interference.A wire grid mask was realized on an InP substrate and a small amount of hemispherical radial porous structures of InP was found on the surface of InP by electrochemical etching.Using a scanning electron microscope to observe the surface and cross-sectional morphology of the hemispherical radial porous structure,it was found that the size of the biomimetic compound eye structure based on InP was on the order of a few micrometers.The reflectivity of the hemispherical radial porous structure was measured using an angle-resolved spectroscopy microscope and the results showed that it has low reflectance optical characteristics for visible light in a specific band. |
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