Effect Of Laser Interference Etching Induced Surface Micro-Structure For The Electrochemical Etching Of InP

Presently, the laser interferometer interference etching technology in more advanced technique for formatting of the ordered nano-arrays structure, preparation technique, which can obtained rule regular array structures lattice on the surface of the sample. However, it is difficult to achieve the depth etching, while the laser interference etching is used to etch the semiconductor substrate. Compared with laser interference technique, electrochemical technique has its advantage such as low cost, simply processing, versatility, and working at normal atmosphere, which have the higher speed of the etching, and it is easy to achieve the depth of etching in a short time. In this paper, the laser inference and the electrochemical etching technology were combined to study the influence on the electrochemical etching based on the pit formed by the laser interference. Firstly, the effect of the current densities and temperature were studied for the formation of porous InP based on the electrochemical etching. The results indicate that the change of the surface morphology of the porous InP are not obvious with the increase of the current densities at certain temperature, but the change of the cross sectional image are regular. Furthermore, the bead-like porous layer will disappear with the increase of the temperature at certain constant current density. The correlation between the cross sectional image and the curve of voltage-time(V-t) was found during the electrochemical etching processing. In addition, the patterns of the four beam lasers were stimulated based on the MATLAB software. The laser density distribution in the field of the interference was analyzed for the change of the incidence angle. Finally, the system of the four beam interference wan found by1064nm laser and used to directly write the patterns on the surface of n-InP(100) wafers. The periodic dots were obtained and the feature size is-7-8μm. The electrochemical etching of InP were carried out based on the laser interference etching. The results showed that the pores of the nano-size were distributed on the surface of the half-sphere, and that the cross sectional image showed the waveguide structure of the bend. Obviously, while the pore’s feature size of the induced microstructure on the surface is large, the inductive effect is not clear for the electrochemical etching of InP. The results also showed that if the pore’s feature size on the surface down to200-300nm, it will form the good inductive effect for the electrochemical etching of InP.