Simulation Of DC Power And Reverse Recovery Of PIN Power Diode

With the development of science and technology,semiconductor devices have been widely applied in all walks of life.Whether in daily life or in the field of national defense technology,we can see the elements of semiconductor devices.The PIN rectifier diode can be seen in the electronic products,the automotive industry,and other automation industries.The application of rectifier diodes in the electric power industry requires large current and high voltage in reverse,but the current is very small.When the device is turned from forwardconduction to reverse turn off,it is called reverse recovery process.Due to the storage of a large number of minority carrierin the forward conduction,Theconversion time of the reverse recovery process is often very long,and special design is needed to shorten the time.Therefore,it is very important to study the reverse recovery process.First,the paper introduces the research background of the subject,and summarizes the development status and main applications of PIN power diode.Then the quasi Fermi energy level,boundary condition,charge distribution and reverse recovery process of single PN junction are briefly introduced.The dissertation mainly studies the boundary conditions under the direct positive bias voltage of PIN power diodes.The PIN power diodes were simulated using Sentaurus-TCAD simulation software,and the simulation results were analyzed based on semiconductor theory.This paper deduced the equation of hole concentration on the n-side with the voltage of the p+n-junction;and the equation for the concentration of electrons in the n-n+ junction depletion region on the n-side as a function of the junction voltage.Due to the low doping of the n-region,the width of the depletion region is very sensitive to external voltage.The reverse recovery process of the PIN diode has a great influence on the circuit performance,and it is worth doing deep research.The reverse recovery process of directly simulating PIN diodes under Sentaurus-TCAD requires complex hybrid circuits and cumbersome program code,So in this paper we use Simulink in Matlab to simulate the reverse recovery process of a diode consisting of a single PN junction by introducing a diffusion capacitance and a barrier capacitance.