Font Size: a A A

Manufacture Of Test Equipments For Reverse Static And Reverse Recovery Parameters Of Diode

Posted on:2020-02-29Degree:MasterType:Thesis
Country:ChinaCandidate:J T ZhangFull Text:PDF
GTID:2428330578459140Subject:Computer application technology
Abstract/Summary:PDF Full Text Request
Diode is one of the basic components of electronic system,and it is also one of the simplest and most widely used semiconductor devices.Whether the parameters of the diode agree with the relevant standards will directly affect the performance of the electric system.Therefore,the correct test and analysis of diode parameters can lay a foundation for the study of the performance of electric system and provide guidance for the optimized design of products.In general,diode parameters are divided into forward parameters and reverse parameters,and the latters are further divided into the reverse static parameters and the reverse dynamic ones.The test apparatus of the reverse static and the reverse recovery parameters of diode are designed in this thesis,which are based on single chip micro-computer technology.The finished work is as follows:(1)The development of test technology of reverse parameters of diodes at home and abroad are analyzed,and the concept of the reverse static parameters and the reverse recovery ones of diodes are expounded,the advantages and disadvantages of various test methods and technologies are elucidated,and the basis and ideas for the design of the reverse static parameters and the reverse recovery ones of diodes of the equipment are provided in this thesis.(2)According to the standard of GB/T 4023-2015/IEC 60747-2:2000,an apparatus of reverse static parameters of diodes is designed.The equipment is mainly used to check the reverse voltage,breakdown voltage,reverse leakage current of diodes,which is mainly made up of power circuit,input/output and control circuit,high voltage pulse source circuit,signal acquisition and processing circuit.The test results can be displayed on the liquid crystal displayer(LCD)screen.A self-excited voltage resonance switching power supply controller is used to control the transformer in this equipment,so that the test range of reverse breakdown voltage for a diode can reach about 1000 V.Using a HC4052 type analog multiplexer,the reverse leakage current can be tested under different ranges(4?A,40?A,400?A,2000?A).A FR207 type diode and a 1N5408 type diode were selected for testing and analyzing.The breakdown voltage of FR207 type diode owns about 1000 V,and its reverse leakage current is only 10 nA at the reverse voltage of 150 V.For the 1N5408diode,the breakdown voltage is checked as about 900 V,and its reverse leakage current is about 10 nA at 100 V reverse voltage.These results are matched well with the data in the production manual,which reflects the effectiveness of the designed equipment.(3)According to the standard of GB/T 4023-2015/IEC 60747-2:2000,an equipment of the reverse recovery parameters of diodes is manufactured,which is used to test the reverse recovery time,reverse recovery charge,and softness of diodes.It includes principally a power circuit,a forward pulse current source circuit,a reverse pulse voltage source circuit,a reverse recovery current test while peak detection circuit,a reverse recovery current signal processing circuit,an input/output and main control circuit.A SF56 type fast recovery diode,a HER207 type high-efficiency rectifier diode,a UF5408 type ultra-fast rectifier diode,a FR207 type diode and a 1N5408 ordinary rectifier diode are selected for testing and analyzing.The reverse recovery time of type 1N5408 diode at I_F=1 A and di/dt=200 A/?s is measured as 19 ns,which was consistent with the data in the production manual,which can verify the effectiveness of the manufactured apparatus.In summary,the reverse static parameters of diode such as reverse voltage,breakdown voltage and reverse leakage current can be accurately tested by the designed equipment of reverse static parameters of diode in the thesis.The reverse recovery parameters such as reverse recovery time,reverse recovery charge,and soft degree can be checked by the manufactured apparatus of reverse recovery parameters of diode.Changing the test conditions,the measured results obey the physical law of semiconductor devices.The conventional components on the market are adopted in the designed equipment,and the single-chip computers are used to calculate the test data and to drive the liquid crystal displayers.The designed equipment can be operated conveniently and are expected for a good market value.
Keywords/Search Tags:power diode, reverse static parameter, reverse recovery parameter, testing equipment
PDF Full Text Request
Related items