Computer Simulations Analysis And Study Of The Dynamic Behavior Of PIN Diode

The high voltage diode used in power electronics is generally designed to p+n-n+ structure. When the device is in the state of forward biased the low-intermediate doped region of p+n-n+ diode is usually to be driven into the large injection state, in this state, the intermediate region is as same as not doped (intrinsic), therefore, p+n-n+ diode is often referred to as pin diode.Firstly, in this paper, we study the characteristics of dynamic avalanche breakdown of the PIN diode, the respective study and analysis of the dynamic electric field distribution in zone I, the carrier distribution at different times, the reverse current density distribution and the lattice temperature distribution explains the reason of the drop of breakdown tolerance: When the dynamic avalanche occurs, there will be a lot of current silk, if the wires are focusing on and staying there long time the current will cause overheating, resulting in temperature increase to build a hot spot, when the temperature is higher than 398℃, the thermal breakdown will happen, resulting in device damage. And this paper, to this phenomenon puts forward some optimize suggestions to improve the breakdown tolerance of diode.Then we research in-depth on the study of the reverse recovery dynamic characteristics of PIN diode, and through the simulation and analysis of static and dynamic characteristics of the PIN diodes with the selected structure by the software of SILVACO we made a systematic analysis of the influence of various parameters on the dynamic performance of the device to achieve the purposes of optimization of device structure and improved dynamic performance. With above study fruits about the reverse recovery characteristics of the intrinsic area, we explain the reasons for limitations of reverse recovery time and reverse recovery softness, and an improvement on reverse recovery time and its softness is presented. In this paper, the reverse recovery time shortened on the basis of the original 10% to 20% by reducing the thickness of I and the forward current density and using appropriate minority carrier lifetime control methods to reduce their life expectancy, at the same time, the recovery softness factor S values has also been improved, then achieve the purpose of optimizing the dynamic characteristics of the by computer simulations.