| At present,electronic devices have been completely integrated into the industrial production and daily life of people.It is essential for various sensors in electronic devices to get environmental information.With the trend of intellectualization,integration and miniaturization of electronic devices,the requirements for high quality sensors have been increased.For example,the information of ambient light intensity and proximity information are expected in the intelligent electronic devices.Therefore,a monolithic integrated photoelectric sensor is proposed for intelligent electronic devices that can provide the two kinds of information(ambient light intensity,proximity information).The monolithic integrated photoelectric sensor is fabricated in 0.18?m CMOS process.In this paper,the main research work and results are as follows:1.According to functional requirements,the design of dial function sensor with ambient light and proximity is proposed.Based on the setting of technical parameters,the overall layout of the chip circuit of each function module is put out.2.The photodiode array is compatibly designed with the 0.18 ?m CMOS process,which can be used to detect the information of ambient light intensity,proximity information.3.The key circuits such as the band-gap reference,the trans-impedance amplifier and the successive approximation register ADC are designed.Then digital signal output is realized.4.The chip is fabricated in the CSMC multi project wafer.The sensor is able to detect the ambient light illuminance from 0 to 10000 Lux,and to detect the proximity distance from 0 to 15 cm.The innovation points of this paper are as follows:A digital-analog optoelectronic integrated sensor chip with photodetector array,signal amplification circuit,ADC and I2C bus circuit is fabricated in 0.18 ?m CMOS process.The chip realizes the sensing function of ambient light intensity,proximity information,and can be applied to intelligent electronic equipment. |
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