Preparation And Photochemical Properties Of In₂S₃/TiO₂/Si?CdIn₂S₄/TiO₂/Si Tiin Films

The binary chalcogenides A₂B₃?A=Al,Ga,In;B=S,Se,Te?and the ternary chalcogenide AB₂C₄?A=Ca,Mg,Zn,Cd;B=Al,Ga,In;C=S,Se,Te?has attracted widespread attention due to its suitable band gap,unique optical and electrical properties,and good catalytic properties.Among these compounds,In₂S₃ and CdIn₂S₄ have attracted considerable attention.They exhibit very good photoelectrochemical properties and are very promising as visible light catalytic materials.This paper is mainly divided into two parts:1.In₂S₃/TiO₂/Si composite films were prepared by a two-step chemical method.Firstly,Si nanorod arrays with uniform morphology were prepared by metal-assisted chemical etching.Then a thin layer of TiO₂ protective layer was sprayed on the surface of Si nanorod arrays by spray pyrolysis,followed by Ti O₂/Si nanorod arrays.Based on InCl₃ and Na₂S as indium source and sulfur source,In₂S₃/TiO₂/Si films were prepared by continuous ion layer adsorption.The influence of deposition times on the photochemical properties of In₂S₃/TiO₂/Si thin films was investigated.2.Based on Si nanorods,CdIn₂S₄/TiO₂/Si films were synthesized by a simple hydrothermal method.Using CdCl₂ as the cadmium source,InCl3 as the indium source and TAA?thioacetamide?as the sulfur source,cubic spinel-structured CdIn₂S₄ nanosheets were prepared on TiO₂/Si nanorod arrays under hydrothermal conditions at 150?,2D/1D composite structure film was obtained.The formation process of CdIn₂S₄/TiO₂/Si films was discussed by changing the hydrothermal time,and the photoelectrochemical properties were studied.