Design And Process Exploration Of ?-?/Si Hybrid Integrated Waveguide

Since the advent of computer and internet,the demanding of people to data size has increased.A variety of medium of delivering information and signal processing method have been demonstrated to satisfy the expectation of faster information transfer rate and greater data processing capability.As the earliest transfer medium of information,electric cable increasingly encounters its bottleneck in terms of data delivering in pace with the popularity of PC and mobile internet.Instead,fiber communication has been proved as the best substitute for high speed communication,which has attracted a lot of attention and advanced the development of optical communication.Semiconductor laser,as the most suitable light source of optical communication,has also witnessed the great advance from the homojunction semiconductor laser to succedent heterojunction semiconductor laser and even to the most recent multiple quantum well semiconductor laser,which has significantly improved the laser performances including modulating rate,linewidth and output power.Since the fundamental principle and the state of art got more and more mature,people have transferred their interest to the aspects of reducing the power consumption,the dimension and the cost.However,traditional semiconductor lasers have some defects in their materials,which makes their performance improvement less obvious and drives people to look for new semiconductor material and novel integration method.In this thesis,a new hybrid integration art and a novel laser structure have been proposed.By integrating the III-V waveguides onto the silicon waveguides which has pretty low transmission loss to obtain a hybrid laser cavity in which the light can couple between different waveguides via evanescent field,the performance of semiconductor laser,comprising the stability of lasing wavelength,low current threshold and high modulating speed,should be promisingly improved.Moreover,the laser structure presented in this thesis can ensure single mode lasing and fixed lasing wavelength spacing of laser array of 0.8nm by the usage of specially designed Bragg grating reflector with ultranarrow bandwidth of 0.8nm.This laser array can easily lock the lasing wavelength at appointed wavelength without the assistance of additional tuning region and excite the lasing simultaneously.Detailed specification of design and optimization of passive silicon waveguides and grating using analytic solution of approximate model and numerical solution has been depicted in this thesis,and the feasibility of passive device has also been demonstrated by experiment.The theories and design methods of active materials and superlattice multiple quantum well are also presented,by which the ?-? wafers used in this thesis have been designed independently.Subsequently,the design and fabrication procedures of ?-? waveguides are described followed by the test results.This thesis is a fundamental exploration to ?-? on silicon hybrid integration in our laboratory,completing the fabrication process of hybrid integrated semiconductor laser and revising the design of the device on the basis of existing fabrication art.