Desgin Of 808nm Wavelength-locked High Power Semiconductor Laser

With the rapid development of the high power semiconductor laser,it has obvious advantages in the field of pumping solid-state lasers and etc.However,as a pumping source,there are still some problems in performance.For example,the wavelength shifts with the increase of temperature,and the drift coefficient is about 0.3-0.4 nm/K,which seriously affects the efficiency as a pumping source.Moreover,with the development of science and technology,more and more emerging fields,such as free space optical communication,require wavelength-stabilized,high power and narrow-linewidth coherent lasers.It has become a hot topic to study the high power wavelength-locked semiconductor laser in recent years.Firstly,based on the design principle of 808 nm semiconductor laser,the epitaxial structure was designed by means of transition selection rule,Kohn-Luttinger Hamiltonian theory and software simulation and etc.Then by studying the wavelength-locked mechanism of Bragg grating and coupled wave mode theory,the 808 nm surface grating high power semiconductor laser with wavelength-locked was designed and simulated.The laser adopts a wide ridge structure,and the remaining part covers the P-electrode,which separates the grating region from the current injection region,making the laser have a good output characteristics.The surface grating semiconductor laser has a lasing wavelength of 809.9nm at 300 K,and the spectral linewidth is 0.14 nm.The threshold current is 1.17 A,and the slope efficiency is 1.55W/A.When the temperature is in the range of 288-315 K,the drift coefficient with temperature is about 0.034nm/K.Finally,the grating preparation was studied experimentally.Second-order gratings were prepared by holographic lithography and dry ICP etching.The gratings were characterized by scanning electron microscopy(SEM).The results showed that the grating morphology is good,the structure is clear and complete,and the stripes are uniform and straight.Through the research of this paper,it provides new research ideas and technical methods for improving the wavelength stability of high power semiconductor lasers,which is of great significance for accelerating the development and application of laser technology.