Simulation And Experimental Analysis Of Secondary Electrostatic Discharge Characteristicse

Secondary Electrostatic Discharge(SESD)is a special electrostatic discharge phenomenon.Compared with the electrostatic discharge event in the ordinary sense,secondary discharge occurs between the tiny gaps inside the electronic equipment and device,and the threat process is very subtle.It is also more hazardous and can reach a transient voltage of tens of thousands of volts.The peak current can reach tens of amperes,which is fatal for many components such as transistors.For this reason,this article studies the secondary electrostatic discharge process through the bar-plate structure.After deep research on the related theory of electrostatic discharge,the general mechanism of the bar discharge process is summarized,and then from macroscopic to microscopic,from simulation to experiment and then to simulation methods to study secondary electrostatic discharge characteristics.Firstly,the principle of secondary electrostatic discharge in the bar structure is analyzed.The secondary discharge process is understood as a peak process and a secondary peak process.The primary peak process is generated by the ESD simulator's displacement current to the gap,and the secondary peak process is formed by the air gap.The breakdown discharge process of the capacitor is produced.Based on the mature discharge numerical model of scholars at home and abroad,circuit-level simulation of secondary electrostatic discharge is realized.It is found that the secondary discharge peak value is greater than one peak value,and the peak rise time is approximately.Then a large number of experiments were designed to analyze the experimental data from a statistical point of view and compared with the circuit-level model to verify the peak discharge characteristics and delay characteristics of the secondary discharge.The peak value of the secondary discharge is closely related to the time delay.The longer the time delay,the longer the capacitor charges and the higher the secondary peak.This correlation can be approximately linear in the nanosecond order,and the linearity is affected by factors such as voltage and pitch.Influenced by high voltage,the linear coefficient is greater.The time delay of the secondary discharge is composed of the statistical delay and the formation delay.The time delay is the time for the flow injection to the electrode of the communication bar.Under certain external conditions,it is a fixed value.The statistical delay is the initial seed electronic randomization.The collision time has certain randomness.Statistical data show that this random characteristic obeys a normal distribution and is affected by external factors such as voltage and spacing.Finally,in the plasma module of COMSOL Multiphysics software,the bar discharge process under the 0.5mm gap was simulated.The simulation results accord with Townsend discharge theory and streamer discharge theory,and the simulation characteristics reported by domestic and foreign scholars are basically consistent,at a distance of 0.2mm.The inflow injection distortion field strength drops to 800kV/m and the flow injection growth rate can reach 60km/s.