Study On The Radiation Effect Of GAN-based LED Electron Beam

With the development of semiconductor devices,more and more optoelectronic devices need to work in the harsh environment of irradiation.This improves the requirements of anti-irradiation ability for optoelectronic devices.As the representative of the third generation semiconductor,GaN material has important applications in many optoelectronic devices.Gallium nitride(GaN)exhibits some unique properties,such as a large direct band gap,strong interatomic bonds,and a high thermal conductivity,which make it an ideal material for optoelectronics,high temperature/highpower devices and shortwavelength devices.The method of producing white light with blue GaN and phosphor powder is an important method to make white LED.GaN materials have a strong anti-radiation ability,in the future space exploration and nuclear technology GaN devices will have broad application prospects.So it is significant to study the irradiation effect of GaN materials and devices.This paper studies the effects of different energy electron beam irradiation on the photovoltaic properties of GaN-based LED and simulates the energy transmission process in the electronic irradiation by Monte Carlo.The main results and works are summarized as follows:1.Using 2.5 GeV electron beam irradiation on GaN base LED,as the increase of irradiation dose,the LED light power exponential decline,higher working current and light wavelength blue shift.Moreover,during irradiation,the illuminated LED is more stable after irradiation.This is mainly due to the different types of defects and the existence of light self-annealing during irradiation.2.By using 1.5MeV electron beam irradiation on white LED lamp panel,the irradiation causes the optical efficiency increased 16%,the peak wavelength blue shift,the temperature increased and the color purity decreased.This is mainly because the distance between the phosphor matrix(YAG)and the lanthanide luminescence center(Ce3+)decreases during irradiation.Meanwhile,the increase in the number of luminescence centers and polarization effects make the band gap of GaN material change also has an important influence.3.Using Monte Carlo to simulate the process of electron energy transfer and range distribution of high energy electron irradiation.And then based on the simplified model,the electron trajectory was simulated by CASINO software.The simulation results can be in good agreement with the theoretical analysis results.It shows that the method has practical value in simulating the energy transfer process of high energy electron irradiation.