Design Of Low Power Voltage Reference

The voltage reference is the core module of the integrated circuit,and widely used in data converters,digital memories,linear regulators and switching power supplies.The traditional bandgap voltage?BGR?reference output voltage is fixed at about 1.2V,which leads to the power supply voltage is greater than 1.2V.With the advent of very large scale integrated circuits?VLSIC?and shrinking feature sizes of the devices,which leads to higher and higher levels of integration on a single chip,the problem of concentrated heat dissipation becomes more and more obvious,which poses new challenges to the power consumption of the voltage reference.In addition,different chips require different supply voltages,which requires accurate research of voltage references with different output voltages.Therefore,it is of great significance to study low power voltage reference.In this paper,a new type of voltage reference is designed for chips that need low power consumption.The thesis firstly introduces the research background and significance of low power voltage reference and the research status at home and abroad.Then,the basic theory of the traditional bandgap voltage reference is introduced,Several different voltage references are analyzed and compared and the key performance indexes of the voltage reference are expounded.Then,the working principle of MOS devices operating in the subthreshold state is analyzed,then designed the PTAT current generation circuit.Finally,the thesis analyzes the high-order temperature characteristic of the threshold voltage in detail,designs a voltage reference with low power consumption,proposes a new second order temperature compensation strategy,through the use of different types of MOS transistors constitute a negative temperature coefficient current generation circuit while achieving the purpose of high order temperature compensation,with the work in the deep linear region of the MOS instead of the actual resistance.the circuit is simple without the need to design additional high-order temperature compensation circuit,is conducive to low power and reduce the chip area.The proposed voltage reference is based on the GSMC130nm RF process,using Cadence's Speture simulation tool simulation,Simulation results show that the output of the voltage reference with second order compensation,The typical reference output voltage is 342mV,the temperature coefficient is better than 56.2 ppm/C^?in the case of different process deviation in-50⁺80?temperature range,The quiescent current consumes only 90nA at supply voltages from 1V to 3.3V,low frequency PSR is-61.4dB,power on time is 30?s,The integrated noise in the range of 10Hz¹00KHz is 186?V_RMS.