Multiphysics Modeling Of Nanoscale Interconnect Structures

The characteristic size of CMOS integrated circuits continues to shrink and is now close to the nanometer scale comparable to the size of atom.However,the performance of the interconnect degrades as its size shrinks,its resistivity increases as the size shrinks,the total capacitance increases as the interconnect density increases,and its thermal stability and reliability are degrading.The industry is conducting research on novel devices and interconnect technologies,such as devices and interconnects based on carbon nanomaterials.In this paper,the multi-physics modeling of carbon nanomaterial interconnect structure is studied.Based on the existing theoretical and experimental results,the multi-physics modeling of the interconnect structure of the GNR and CNT is carried out in this paper,mainly including its electrical and thermal characteristics and thermal stress.Firstly,through reasonable approximation and simplification,the heat conduction equation of each region in the structure is established and solved.Then the power density distribution on the interconnect is used to couple the thermal model with the electrical model of the specific material.In the study of the temperature dependence of material parameters,the finite difference method is used to numerically solve the established model,and then the influence of the bump in the graphene nanoribbon interconnect on the thermal characteristics of the circuit is analyzed based on the numerical solution.Finally,the finite element method is used in the multi-physics modeling of the circuit,and the stress caused by the temperature rise and mismatch of parameters between different materials is analyzed.In this paper,the multi-physics characteristics of interconnect based on carbon nanomaterials at nanoscale are analyzed in detail.The analytical model,numerical model and result analysis are of great significance for the design and analysis of interconnect in nanoscale,and provide a new idea for its development.