Study On Electrical Degradation Of The Silicon PIN Photodiodes By Millisecond Pulse Laser Irradiation

Since the advent of laser and related industry growing,now laser technology has become a new branch of science.With the development of relevant industries and the progress of science and technology,laser products is increasing,The application of laser make the large number of transformation in industry.Such as medical treatment,machining,ranging,optical communication,printing,marking,etc.Silicon-based PIN photodiodes are the most common type of optoelectronic devices.It has many advantages,such as high quantum efficiency,fast response,small mass and high precision.It is often used in near infrared detection.So it is very important to study the electrical degradation of silicon-based PIN photodiode induced by laser irradiation.In recent years,many researchers have focused on the damage threshold of photodiodes,however the research on the damage of silicon-based PIN photodiode caused by laser in milliseconds has not been reported.In this paper,the electrical degradation of Si-based PIN photodiode induced by 1064 nm Nd: YAG laser is studied.The COMSOL Multiphysics finite element software was used to simulate and analyze the damage process of silicon-based PIN photodiode,two-dimensional axisymmetric model is established for the multi-layer structure of the silicon-based PIN photodiode,the temperature field and the stress field of the PIN photodiode with the spatial position of the silicon substrate are obtained,The effect of thermal stress on the electrical properties of silicon-based PIN photodiode was obtained by the stress field on the bond crystal lattice.The surface temperature of the detector was monitored in the experiment,the shape of the PIN photodiode after the damage was measured,and the responsivity and dark current of pin photodiode was off-line measurement,By comparing the experimental and simulation results,the reasons for the deterioration of the electrical properties of the silicon-based PIN photodiode are discussed.The results of this study provide theoretical guidance for the deterioration of the electrical properties of silicon-based PIN photodiodes and the reference for the study of laser damage of photoelectric detectors.